Understanding the cause of failures within semiconductor components at the earliest stage of the production pipeline is key to keeping costs down and efficiencies up. Recent developments in this technique have exploited the use of laser scanning near-IR microscopy for the purposes of through-silicon fault localisation and defect characterisation.
Chromacity has developed a laser source that provides ultrashort pulses between 1250 nm – 1310 nm (depending on application). This can be implemented within a soft defect localisation and laser assisted device localisation (LADA) platform to create two-photon absorption-induced single–event upsets (SEU). Our technologies are at the forefront of developing the generation failure analysis technique.
The Chromacity sources allows the FA community to implement ultrafast nonlinear optoelectronic probing platforms for the purpose of advanced IC debug and characterisation with the best localised volumetric resolution performance. In addition to the impressive spatial performance of both 2pLADA and 2pSEU, the temporal performance of this technique offers the significant ability to characterise failures that have yet to be fully discovered.
The Chromacity OPO has also demonstrated capabilities to interrogate next generation Integrated Circuits (ICs) across the telecoms wavelength bands and beyond. Ultrashort pulse near-IR radiation can deliver significant levels of peak optical power to a functional device, which can temporarily disturb the prescribed digitisation level in local memory cells, holding their individual transistors in artificially high electronic states until the operational sequence is reiterated, making our technology the best in class.
Our Chromacity 1040 can be used in 2-photon or SHG imaging setups to excite fluorescent markers or tissues with a SHG response.
We offer a range of visible and near-IR fixed wavelength sources with high average powers and ultrashort pulse durations.
Detecting and quantifying unknown substances is of ever-increasing importance within the security and defence sector. Our Optical Parametric Oscillator (OPO) technology is a key source in enabling the simultaneous detection of a wide range of chemical signatures.
The tuning range of our near-IR OPO (1.4 µm – 4.2 µm) and mid-IR OPO (5 µm – 12 µm) can be implemented within FTIR experimental setups for stand-off detection (typically of various hydrocarbons and volatile/explosive vapours) and powder spectroscopy. The Chromacity OPOs can provide the perfect solution thanks to their high power, short pulse duration (for time dependent measurements), large wavelength span and compact footprint.
Our technology can be implemented across a wide range of different applications, ranging from military threat detection to airport and events security.