Chromacity 1280

1280 nm Femtosecond Laser

Chromacity’s 1280 nm laser generates femtosecond pulses, with a fiber delivery output, to drive advances in test and measurement applications within the semiconductor industry.

 

While operating at 1280 nm, Chromacity’s ultrafast laser can also generate 80 fs pulses across the 1250 nm – 1310 nm wavelength range, and combined with excellent beam quality, the Chromacity 1280 has scope to broaden fundamental research and material characterisation capabilities.  

 

The 1280 nm laser inherits Chromacity’s novel laser design architecture and patented manufacturing expertise to develop a high performance, and truly stable light source, which is operationally ready with minimal set-up time. 

   

Discover more about the capabilities of the Chromacity 1280, email: sales@chromacitylasers.com  

 

Applications

  • Two-photon laser-assisted device alteration (2p LADA) in silicon integrated-circuits
  • Two-photon optical beam induced current (TOBIC)
  • Material characterisation
  • Fundamental research
  • Interrogating photonics integrated circuits

 

Laser scanning and optoelectronic imaging of integrated circuits is crucial towards optimal semiconductor failure analysis, at a time when the industry faces global chip shortages.

 

With seamless integration into Laser Assisted Device Alteration (LADA) platforms, Chromacity’s robust 1280 nm laser source can help determine soft defect localization, using near-IR microscopy techniques including (2P-LADA).

 

Two-Photon Laser Assisted Device Alteration (2P-LADA) is a high-resolution imaging technique which exploits two-photon absorption (TPA) to deliver precise three-dimensional localisation of the photocarriers, injected by the TPA process, to accurately locate and characterise failures, with optimum spatial and temporal performance.

 

Similarly, the Two-Photon Optical Beam Induced Current (TOBIC) technique is another laser-scanning method for imaging integrated circuits. This technique uses ultrashort-pulse lasers to induce a photocurrent which is subsequently mapped to generate an image. TOBIC imaging occurs around 1250 – 1550 nm where the beam is easily transmitted through the silicon band gap.

Technical Data

Specifications:

Output Wavelength

1280 nm

Peak Power

4 kW

Output Power

30 mW (Average Power)

Pulse Duration

80 fs

Pulse Repetition Frequency

100 MHz

Pulse Energy

300 pJ

Bandwidth

80 nm

Electrical

Voltage 110 – 240 V AC, Frequency 50 – 60 Hz, Power 80 W

Control interface

Web browser interface. Ethernet & serial port (RS232) also available.

Cooling

Air cooled

Installation

Remote installation available

Dimensions

Length: Laser Head

614 x 304 x 96 mm

Beam Profile

Beam shape measured at a distance of 500 mm from fiber and collimated using an aspheric lens with focal length 8 mm. Fiber has MFD of 12.6 μm.

Beam Profile

Applications
Download our datasheet

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